InfinityRF’s product portfolio features high-performance GaN HEMT devices, including 650 V and 1200 V high‑voltage GaN transistors for power switching and amplification.
These components are designed for advanced applications such as 5G/Wi‑Fi base statio

SEMINC Silicon Nitride Plates(Si3N4)
Using ultra-pure silicon nitride powder as raw material, combined with unique sintering technology, it can perfectly exert the characteristics of the material. Physical properties such as bending strength, thermal cond